Electrometallurgy Today, 2024, №01



2024 №01 (05)

DOI of Article 10.37434/sem2024.01.06

2024 №01 (01)

---

Electrometallurgy Today (Sovremennaya Elektrometallurgiya), 2024, #1, 49-56 pages

Analyzing silicon for the content of oxygen, nitrogen and hydrogen impurities

R.V. Kozin, O.M. Kalinyuk, A.M. Kibkalo, M.M. Kalinyuk, O.L. Puzrin

E.O. Paton Electric Welding Institute of the NAS of Ukraine 11 Kazymyr Malevych Str., 03150, Kyiv, Ukraine. E-mail: office@paton.kiev.ua

Abstract
Literature review of the new methods of producing polycrystalline and monocrystalline silicon by electron beam and plasma melting developed during the last 10–15 years is presented. A review of publications on determination of oxygen, nitrogen, and hydrogen contents in silicon is given. Express procedures for determination of oxygen content in silicon by reducing melting in a graphite crucible in a flow of helium have been developed, and comparison of these procedures with infrared spectrometry is given. Procedures for determination of hydrogen and nitrogen content in silicon have been developed. 25 Ref., 4 Tabl., 5 Fig.
Keywords: analysis, silicon, oxygen, nitrogen, hydrogenн

Received: 04.12.2023
Received in revised form: 18.12.2023
Accepted: 19.02.2024

References

1. Shapovalov, V.A., Sheiko I.V., Nikitenko Yu.A. et al. (2012) Problems in production of puresilicon for solar power engineering. Advances in Electrometallurgy, 3, 211-218.
2. Naumov, A.V. (2006) Manufacture of photoelectric convertors and market of silicon raw materials in 2006-2010. Tekhnologiya i Konstruirovanie v Elektronnoj Apparature, 4, 3-8 [in Russian].
3. Berezos, V.A., Erokhin, A.G (2009) Refining silicon by electron beam melting. Advances in Electrometallurgy, 3, 174-177.
4. Babych, V.M., Bletskan, N.I., Venger, E.F. (1997) Oxygen in silicon monocrystals. Interpress [in Russian].
5. Gasyk, M.I.,Gasyk, M.M. (2011) Electrothermics of silicon, Dnipro, NMAU [in Russian].
6. Shapovalov, V.A., Sheiko, I.V., Nikitenko, Yu.A. et al. (2012) Induction melting and refining of silicon in a sectional solidification mould. Advances in Electrometallurgy, 4, 259-263.
7. Chervony, I.F., Shvets, E.Ya., Egorov, S.G. (2006) Melting of silicon in vertical induction crucible-free zonal melting. Advances in Electrometallurgy, 3, 24-26.
8. Tetelbaum, D.I., Zorin, E.I., Lysenkova, N.V. (2004) Anomalous solubility of nitrogen in silicon, highly-alloyed by boron. Fizika i Tekhnika Poluprovodnikov, 38(7), 808-810 [in Russian]. https://doi.org/10.1134/1.1777598
9. Kritskaya, T.V., Shvartsman, L.Y. (2012) Nitrogen effect on properties of crystalline silicon of semiconductor purity. Metallurg, 3, 23-28 [in Russian].
10. Zhavzharov, E.L., Kritskaya, T.V., Matyushin, V.M., Chashchinov, Yu.M. (2013) Certain particularities of hydrogen behavior in cristalline silicon. Metalurgiya, Naukovi Pratsi ZDIA, 30(2), 137-145 [in Russian].
11. Asnis, E.A., Lesnoi, A.B., Piskun, N.V. (2011) Refining of silicon single crystals in growth by electron beam crucibleless zonal melting. Advances in Electrometallurgy, 3, 147-151.
12. Petrov, S.V. (2013) Plasma process of production of "solar grade" silicon. Advances in Electrometallurgy, 3, 210-219.
13. Lyakishev, N.P., Bannykh, O.A., Rykhlin, L.L. (1996) State diagrams of the binary metallic systems, Vol. 1. Moscow, Mashinostroenie [in Russian].
14. (2007) SEMI MF 1188-1107: Test method for interstitial oxygen content of silicon by infrared absorption with short baseline.
15. Kovalev, I.D., Koterva, G.V., Gusev, A.V. et al. (2008) Determination of oxygen and carbon impurities in polycrystalline silicon by IR-spectrometry. Zhurnal Analiticheskoi Khimii, 63(3), 274-278 [in Russian]. https://doi.org/10.1134/S1061934808030106
16. (2007) ASTM F 121-70T: Method of test for interstitial atomic oxygen by infrared absorption.
17. Gryse, O.De, Vanmeerbeek, P., Vanhellemont, J., Clauws, P. (2006) Infrared analysis of the precipitated oxide phase in silicon and germanium. J. Physica, B376-377, 113-116. https://doi.org/10.1016/j.physb.2005.12.030
18. Gryse, O.De, Clauws, P., Van Landrut J. et al. (2002) Oxide phase determination in silicon using infrared spectroscopy and transmission electron. Microscopy techniques, J. Appl. Physics, 91(4), 2493-2498. https://doi.org/10.1063/1.1429800
19. Vasserman, A.M., Kunin, L.L., Surovoj, Y.N. (1976) Determination of gases in metals. Moscow, Nauka [in Russian].
20. Firsov, V.I., Shulepnicov, M.N. (1988) Modern condition of neutron-activation method analysis of semiconductor silicon, Zhurnal Analiticheskoi Khimii, 43(5), 77-785 [in Russian].
21. (1991) Application bulletin, LECO Corp., form № 203-601- 219, Oxygen in solid silicon, January.
22. Kaiser, G., Schubert, H. (1993) The determination of oxygen in Si3N4 powder. J. European Ceramic Soc., 11 b, 253-262. https://doi.org/10.1016/0955-2219(93)90095-9
23. (2018) O836 Si, Oxygen in silicon, Form № 209-215-008, LECO Corp., 1-18.
24. Kalinyuk, M.M., Kozin, R.V., Kalyniuk, M.M. et al. (2023) Active and passive preparation of analytical samples of metals for determination of oxygen, nitrogen, hydrogen concentrations in them. Suchasna Elektrometal., 4, 54-60 [in Ukrainian]. https://doi.org/10.37434/sem2023.04.07
25. Hultgren, R., Orr, R.I., Anderson, P.D., Kelley, K.K. (1963) Selected values of thermodynamic properties of metals and alloys. John Wiley and Sons, Inc., NY, London.

---

Advertising in this issue:

---