"Suchasna Elektrometallurgiya" (Electrometallurgy Today), 2024, #1, 49-56 pages
Analyzing silicon for the content of oxygen, nitrogen and hydrogen impurities
R.V. Kozin, O.M. Kalinyuk, A.M. Kibkalo, M.M. Kalinyuk, O.L. Puzrin
E.O. Paton Electric Welding Institute of the NAS of Ukraine
11 Kazymyr Malevych Str., 03150, Kyiv, Ukraine. E-mail: office@paton.kiev.ua
Abstract
Literature review of the new methods of producing polycrystalline and monocrystalline silicon by electron beam and
plasma melting developed during the last 10–15 years is presented. A review of publications on determination of oxygen,
nitrogen, and hydrogen contents in silicon is given. Express procedures for determination of oxygen content in
silicon by reducing melting in a graphite crucible in a flow of helium have been developed, and comparison of these
procedures with infrared spectrometry is given. Procedures for determination of hydrogen and nitrogen content in silicon
have been developed. 25 Ref., 4 Tabl., 5 Fig.
Keywords: analysis, silicon, oxygen, nitrogen, hydrogenн
Received: 04.12.2023
Received in revised form: 18.12.2023
Accepted: 19.02.2024
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